BFN27E6327HTSA1 Transistor Datasheet & Specifications

PNP SOT-23 General Purpose Infineon
VCEO
300V
Ic Max
200mA
Pd Max
360mW
hFE Gain
25

Quick Reference

The BFN27E6327HTSA1 is a PNP bipolar transistor in a SOT-23 package by Infineon. This datasheet provides complete specifications including 300V breakdown voltage and 200mA continuous collector current. Download the BFN27E6327HTSA1 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO300VBreakdown voltage
Ic200mACollector current
Pd360mWPower dissipation
DC Current Gain25hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current20uALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA92 PNP SOT-23 300V 500mA 300mW
FMMTA92TA PNP SOT-23 300V 200mA 310mW
MMBTA92 PNP SOT-23 300V 200mA 300mW
MMBTA92(RANGE:100-200) PNP SOT-23 300V 200mA 300mW
MMBTA92-7-F PNP SOT-23 300V 500mA 300mW
MMBTA94 PNP SOT-23 400V 200mA 350mW
MMBTA94 PNP SOT-23 400V 200mA 350mW
MMBTA94-6AF PNP SOT-23 400V 200mA 350mW
MMBTA92 PNP SOT-23 300V 200mA 300mW
MMBTA94 PNP SOT-23 400V 300mA 350mW