MMBTA56W Transistor Datasheet & Specifications

PNP SOT-323 General Purpose YFW
VCEO
80V
Ic Max
500mA
Pd Max
150mW
hFE Gain
100

Quick Reference

The MMBTA56W is a PNP bipolar transistor in a SOT-323 package by YFW. This datasheet provides complete specifications including 80V breakdown voltage and 500mA continuous collector current. Download the MMBTA56W datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYFWOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic500mACollector current
Pd150mWPower dissipation
DC Current Gain100hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMST5401(RANGE:100-300) PNP SOT-323 150V 600mA 200mW
MMSTA56-7-F-HXY PNP SOT-323 150V 600mA 200mW
PMSTA56-HXY PNP SOT-323 150V 600mA 200mW
SMMBTA56WT3G-HXY PNP SOT-323 150V 600mA 200mW
NSVMMBT5401WT1G-HXY PNP SOT-323 150V 600mA 200mW
BC806-16WF-HXY PNP SOT-323 150V 600mA 200mW
MMBTA56WT1G-HXY PNP SOT-323 150V 600mA 200mW
MMBT5401W PNP SOT-323 150V 600mA 200mW
MMST5401 PNP SOT-323 150V 600mA 200mW
MMST5401 PNP SOT-323 150V 600mA 200mW