MMST5401 Transistor Datasheet & Specifications
PNP
SOT-323
General Purpose
MSKSEMI
VCEO
150V
Ic Max
600mA
Pd Max
200mW
hFE Gain
300
Quick Reference
The MMST5401 is a PNP bipolar transistor in a SOT-323 package by MSKSEMI. This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the MMST5401 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MSKSEMI | Original Manufacturer |
| Package | SOT-323 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMST5401(RANGE:100-300) | PNP | SOT-323 | 150V | 600mA | 200mW |
| MMSTA56-7-F-HXY | PNP | SOT-323 | 150V | 600mA | 200mW |
| PMSTA56-HXY | PNP | SOT-323 | 150V | 600mA | 200mW |
| SMMBTA56WT3G-HXY | PNP | SOT-323 | 150V | 600mA | 200mW |
| NSVMMBT5401WT1G-HXY | PNP | SOT-323 | 150V | 600mA | 200mW |
| BC806-16WF-HXY | PNP | SOT-323 | 150V | 600mA | 200mW |
| MMBTA56WT1G-HXY | PNP | SOT-323 | 150V | 600mA | 200mW |
| MMBT5401W | PNP | SOT-323 | 150V | 600mA | 200mW |
| MMST5401 | PNP | SOT-323 | 150V | 600mA | 200mW |