MMBTA56-7-F Transistor Datasheet & Specifications

PNP SOT-23 General Purpose DIODES
VCEO
80V
Ic Max
500mA
Pd Max
350mW
hFE Gain
100

Quick Reference

The MMBTA56-7-F is a PNP bipolar transistor in a SOT-23 package by DIODES. This datasheet provides complete specifications including 80V breakdown voltage and 500mA continuous collector current. Download the MMBTA56-7-F datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic500mACollector current
Pd350mWPower dissipation
DC Current Gain100hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat250mVSaturation voltage
Vebo4VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
SMMBTA56LT1G PNP SOT-23 80V 500mA 300mW
MMBTA56LT3G PNP SOT-23 80V 500mA 225mW
NSVMMBT5401LT3G PNP SOT-23 150V 500mA 300mW
SMMBTA56LT3G PNP SOT-23 80V 500mA 300mW
PMBTA56-HXY PNP SOT-23 80V 500mA 225mW
MMBT5401-7-F PNP SOT-23 150V 600mA 310mW