MMBTA55LT1G Transistor Datasheet & Specifications

PNP SOT-23 General Purpose onsemi
VCEO
60V
Ic Max
500mA
Pd Max
225mW
hFE Gain
100

Quick Reference

The MMBTA55LT1G is a PNP bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 500mA continuous collector current. Download the MMBTA55LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic500mACollector current
Pd225mWPower dissipation
DC Current Gain100hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT2907A PNP SOT-23 60V 600mA 300mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBT2907A PNP SOT-23 60V 600mA 250mW
FMMT591TA PNP SOT-23 60V 1A 500mW
MMBT2907ALT1HTSA1 PNP SOT-23 60V 600mA 330mW