MMBT2907ALT1HTSA1 Transistor Datasheet & Specifications

PNP SOT-23 General Purpose Infineon
VCEO
60V
Ic Max
600mA
Pd Max
330mW
hFE Gain
75

Quick Reference

The MMBT2907ALT1HTSA1 is a PNP bipolar transistor in a SOT-23 package by Infineon. This datasheet provides complete specifications including 60V breakdown voltage and 600mA continuous collector current. Download the MMBT2907ALT1HTSA1 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic600mACollector current
Pd330mWPower dissipation
DC Current Gain75hFE / Beta
Frequency200MHzTransition speed (fT)
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current10uALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
MMBT2907A PNP SOT-23 60V 600mA 300mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBT2907A PNP SOT-23 60V 600mA 250mW
FMMT591TA PNP SOT-23 60V 1A 500mW
SMMBT2907ALT1G PNP SOT-23 60V 600mA 225mW
FMMT591 PNP SOT-23 60V 1A 500mW
MMBT2907A(RANGE:100-300) PNP SOT-23 60V 600mA 250mW