MMBTA55-JSM Transistor Datasheet & Specifications

PNP SOT-23 General Purpose JSMSEMI
VCEO
60V
Ic Max
500mA
Pd Max
300mW
hFE Gain
100

Quick Reference

The MMBTA55-JSM is a PNP bipolar transistor in a SOT-23 package by JSMSEMI. This datasheet provides complete specifications including 60V breakdown voltage and 500mA continuous collector current. Download the MMBTA55-JSM datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic500mACollector current
Pd300mWPower dissipation
DC Current Gain100hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat250mVSaturation voltage
Vebo4VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT2907A PNP SOT-23 60V 600mA 300mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBT2907A PNP SOT-23 60V 600mA 250mW
FMMT591TA PNP SOT-23 60V 1A 500mW
MMBT2907ALT1HTSA1 PNP SOT-23 60V 600mA 330mW