MMBT8050D(J3Y) Transistor Datasheet & Specifications

NPN SOT-23 General Purpose ST(Semtech)
VCEO
25V
Ic Max
600mA
Pd Max
350mW
hFE Gain
160

Quick Reference

The MMBT8050D(J3Y) is a NPN bipolar transistor in a SOT-23 package by ST(Semtech). This datasheet provides complete specifications including 25V breakdown voltage and 600mA continuous collector current. Download the MMBT8050D(J3Y) datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerST(Semtech)Original Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic600mACollector current
Pd350mWPower dissipation
DC Current Gain160hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT491ATA NPN SOT-23 40V 1A 500mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
SS8050 NPN SOT-23 25V 1.5A 300mW
ZXTN2040FTA NPN SOT-23 40V 1A 310mW
FMMT493ATA NPN SOT-23 60V 1A 500mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT4401 NPN SOT-23 40V 600mA 350mW
PBSS4350T,215 NPN SOT-23 50V 2A 300mW
NSS40201LT1G NPN SOT-23 40V 2A 460mW