MMBT8050C Transistor Datasheet & Specifications
NPN
TO-236
General Purpose
ST(Semtech)
VCEO
25V
Ic Max
600mA
Pd Max
350mW
hFE Gain
100
Quick Reference
The MMBT8050C is a NPN bipolar transistor in a TO-236 package by ST(Semtech). This datasheet provides complete specifications including 25V breakdown voltage and 600mA continuous collector current. Download the MMBT8050C datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST(Semtech) | Original Manufacturer |
| Package | TO-236 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 25V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 350mW | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMBT5551 | NPN | TO-236 | 160V | 600mA | 350mW |