MMBT3906 Transistor Datasheet & Specifications

PNP SOT-23 General Purpose LGE
VCEO
40V
Ic Max
100mA
Pd Max
250mW
hFE Gain
100

Quick Reference

The MMBT3906 is a PNP bipolar transistor in a SOT-23 package by LGE. This datasheet provides complete specifications including 40V breakdown voltage and 100mA continuous collector current. Download the MMBT3906 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic100mACollector current
Pd250mWPower dissipation
DC Current Gain100hFE / Beta
Frequency250MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
FMMT560TA PNP SOT-23 500V 150mA 500mW
MMBT3906 PNP SOT-23 40V 200mA 300mW
LBSS5240LT1G PNP SOT-23 40V 2A 300mW
BC856ALT1G PNP SOT-23 65V 100mA 225mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
2SA812 PNP SOT-23 50V 100mA 200mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC856BLT1G PNP SOT-23 65V 100mA 225mW