MMBT3904T Transistor Datasheet & Specifications

NPN SOT-523 General Purpose BORN
VCEO
40V
Ic Max
200mA
Pd Max
150mW
hFE Gain
40

Quick Reference

The MMBT3904T is a NPN bipolar transistor in a SOT-523 package by BORN. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3904T datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerBORNOriginal Manufacturer
PackageSOT-523Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd150mWPower dissipation
DC Current Gain40hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT4401T-7-F NPN SOT-523 40V 600mA 150mW
MMBT2222AT-7-F NPN SOT-523 40V 600mA 150mW
MMBT2222AT NPN SOT-523 40V 600mA 150mW
MMBT3904T-7-F NPN SOT-523 40V 200mA 150mW
MMBT3904FX NPN SOT-523 40V 200mA 200mW
MMBT3904T NPN SOT-523 40V 200mA 150mW
MMBT3904T NPN SOT-523 40V 200mA 150mW
MMBT3904T NPN SOT-523 40V 200mA 150mW
MMBT3904T-MS NPN SOT-523 40V 200mA 150mW
MMBT3904T NPN SOT-523 40V 200mA 150mW