MMBT3904T-MS Transistor Datasheet & Specifications

NPN SOT-523 General Purpose MSKSEMI
VCEO
40V
Ic Max
200mA
Pd Max
150mW
hFE Gain
100

Quick Reference

The MMBT3904T-MS is a NPN bipolar transistor in a SOT-523 package by MSKSEMI. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3904T-MS datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageSOT-523Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd150mWPower dissipation
DC Current Gain100hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT4401T-7-F NPN SOT-523 40V 600mA 150mW
MMBT2222AT-7-F NPN SOT-523 40V 600mA 150mW
MMBT2222AT NPN SOT-523 40V 600mA 150mW
MMBT3904T-7-F NPN SOT-523 40V 200mA 150mW
MMBT3904FX NPN SOT-523 40V 200mA 200mW
MMBT3904T NPN SOT-523 40V 200mA 150mW
MMBT3904T NPN SOT-523 40V 200mA 150mW
MMBT3904T NPN SOT-523 40V 200mA 150mW
MMBT3904T NPN SOT-523 40V 200mA 150mW
MMBT3904T(RANGE:100-300) NPN SOT-523 40V 200mA 150mW