MMBT2907AG-AE3-R Transistor Datasheet & Specifications

PNP SOT-23 General Purpose UTC
VCEO
60V
Ic Max
600mA
Pd Max
350mW
hFE Gain
100

Quick Reference

The MMBT2907AG-AE3-R is a PNP bipolar transistor in a SOT-23 package by UTC. This datasheet provides complete specifications including 60V breakdown voltage and 600mA continuous collector current. Download the MMBT2907AG-AE3-R datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic600mACollector current
Pd350mWPower dissipation
DC Current Gain100hFE / Beta
Frequency200MHzTransition speed (fT)
VCEsat1.6VSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current20nALeakage (ICBO)
Temp-40โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
MMBT2907A PNP SOT-23 60V 600mA 300mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBT2907A PNP SOT-23 60V 600mA 250mW
FMMT591TA PNP SOT-23 60V 1A 500mW
MMBT2907ALT1HTSA1 PNP SOT-23 60V 600mA 330mW
SMMBT2907ALT1G PNP SOT-23 60V 600mA 225mW
FMMT591 PNP SOT-23 60V 1A 500mW