MMBT2907 2F Transistor Datasheet & Specifications

PNP SOT-23 General Purpose TDSEMIC
VCEO
60V
Ic Max
600mA
Pd Max
225mW
hFE Gain
400

Quick Reference

The MMBT2907 2F is a PNP bipolar transistor in a SOT-23 package by TDSEMIC. This datasheet provides complete specifications including 60V breakdown voltage and 600mA continuous collector current. Download the MMBT2907 2F datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTDSEMICOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic600mACollector current
Pd225mWPower dissipation
DC Current Gain400hFE / Beta
Frequency-Transition speed (fT)
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
MMBT2907A PNP SOT-23 60V 600mA 300mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBT2907A PNP SOT-23 60V 600mA 250mW
FMMT591TA PNP SOT-23 60V 1A 500mW
MMBT2907ALT1HTSA1 PNP SOT-23 60V 600mA 330mW
SMMBT2907ALT1G PNP SOT-23 60V 600mA 225mW
FMMT591 PNP SOT-23 60V 1A 500mW