MMBT2222A-MS Transistor Datasheet & Specifications

NPN SOT-23 General Purpose MSKSEMI
VCEO
40V
Ic Max
600mA
Pd Max
300mW
hFE Gain
300

Quick Reference

The MMBT2222A-MS is a NPN bipolar transistor in a SOT-23 package by MSKSEMI. This datasheet provides complete specifications including 40V breakdown voltage and 600mA continuous collector current. Download the MMBT2222A-MS datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic600mACollector current
Pd300mWPower dissipation
DC Current Gain300hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT491ATA NPN SOT-23 40V 1A 500mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
ZXTN2040FTA NPN SOT-23 40V 1A 310mW
FMMT493ATA NPN SOT-23 60V 1A 500mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT4401 NPN SOT-23 40V 600mA 350mW
PBSS4350T,215 NPN SOT-23 50V 2A 300mW
NSS40201LT1G NPN SOT-23 40V 2A 460mW
MMBT5551 NPN SOT-23 160V 600mA 300mW