MMBT2222 Transistor Datasheet & Specifications

NPN SOT-23 General Purpose YONGYUTAI
VCEO
40V
Ic Max
600mA
Pd Max
300mW
hFE Gain
400

Quick Reference

The MMBT2222 is a NPN bipolar transistor in a SOT-23 package by YONGYUTAI. This datasheet provides complete specifications including 40V breakdown voltage and 600mA continuous collector current. Download the MMBT2222 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYONGYUTAIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic600mACollector current
Pd300mWPower dissipation
DC Current Gain400hFE / Beta
Frequency-Transition speed (fT)
VCEsat300mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT491ATA NPN SOT-23 40V 1A 500mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
ZXTN2040FTA NPN SOT-23 40V 1A 310mW
FMMT493ATA NPN SOT-23 60V 1A 500mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT4401 NPN SOT-23 40V 600mA 350mW
PBSS4350T,215 NPN SOT-23 50V 2A 300mW
NSS40201LT1G NPN SOT-23 40V 2A 460mW
MMBT5551 NPN SOT-23 160V 600mA 300mW