MJE5731AG Transistor Datasheet & Specifications
PNP
TO-220
General Purpose
onsemi
VCEO
375V
Ic Max
1A
Pd Max
40W
hFE Gain
150
Quick Reference
The MJE5731AG is a PNP bipolar transistor in a TO-220 package by onsemi. This datasheet provides complete specifications including 375V breakdown voltage and 1A continuous collector current. Download the MJE5731AG datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 375V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 40W | Power dissipation |
| DC Current Gain | 150 | hFE / Beta |
| Frequency | 10MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJE5852G | PNP | TO-220 | 400V | 8A | 80W |