MJE5852G Transistor Datasheet & Specifications
PNP
TO-220
High Power
onsemi
VCEO
400V
Ic Max
8A
Pd Max
80W
hFE Gain
5
Quick Reference
The MJE5852G is a PNP bipolar transistor in a TO-220 package by onsemi. This datasheet provides complete specifications including 400V breakdown voltage and 8A continuous collector current. Download the MJE5852G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 400V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 80W | Power dissipation |
| DC Current Gain | 5 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 5V | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 2.5mA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |