MJE170G Transistor Datasheet & Specifications
PNP
TO-225-3
High Power
onsemi
VCEO
40V
Ic Max
3A
Pd Max
12.5W
hFE Gain
50
Quick Reference
The MJE170G is a PNP bipolar transistor in a TO-225-3 package by onsemi. This datasheet provides complete specifications including 40V breakdown voltage and 3A continuous collector current. Download the MJE170G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-225-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 12.5W | Power dissipation |
| DC Current Gain | 50 | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |