MJE253G Transistor Datasheet & Specifications

PNP TO-225-3 High Power onsemi
VCEO
100V
Ic Max
4A
Pd Max
15W
hFE Gain
180
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Quick Reference

The MJE253G is a PNP bipolar transistor in a TO-225-3 package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 4A continuous collector current. Download the MJE253G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-225-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic4ACollector current
Pd15WPower dissipation
DC Current Gain180hFE / Beta
Frequency40MHzTransition speed (fT)
VCEsat600mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current100uALeakage (ICBO)
Temp-65℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
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