MJE15035G Transistor Datasheet & Specifications
PNP
TO-220
High Power
onsemi
VCEO
350V
Ic Max
4A
Pd Max
50W
hFE Gain
100
Quick Reference
The MJE15035G is a PNP bipolar transistor in a TO-220 package by onsemi. This datasheet provides complete specifications including 350V breakdown voltage and 4A continuous collector current. Download the MJE15035G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 350V | Breakdown voltage |
| Ic | 4A | Collector current |
| Pd | 50W | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 30MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJE5852G | PNP | TO-220 | 400V | 8A | 80W |