MJE15031G Transistor Datasheet & Specifications
PNP
TO-220
High Power
onsemi
VCEO
150V
Ic Max
8A
Pd Max
50W
hFE Gain
20
Quick Reference
The MJE15031G is a PNP bipolar transistor in a TO-220 package by onsemi. This datasheet provides complete specifications including 150V breakdown voltage and 8A continuous collector current. Download the MJE15031G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 50W | Power dissipation |
| DC Current Gain | 20 | hFE / Beta |
| Frequency | 30MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |