MJD31C Transistor Datasheet & Specifications
NPN
TO-252-2L
General Purpose
HXY MOSFET
VCEO
100V
Ic Max
3A
Pd Max
1.25W
hFE Gain
75
Quick Reference
The MJD31C is a NPN bipolar transistor in a TO-252-2L package by HXY MOSFET. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the MJD31C datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-252-2L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 1.25W | Power dissipation |
| DC Current Gain | 75 | hFE / Beta |
| Frequency | 3MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SD1815(RANGE:100-200) | NPN | TO-252-2L | 100V | 3A | 1W |
| MJD31C | NPN | TO-252-2L | 100V | 3A | 1.25W |
| MJD41C | NPN | TO-252-2L | 100V | 3A | 1W |
| MJD41C | NPN | TO-252-2L | 100V | 9A | 1.25W |
| MJD122 | NPN | TO-252-2L | 100V | 8A | 1.5W |