MJD253T4G Transistor Datasheet & Specifications
PNP
TO-252-2(DPAK)
High Power
onsemi
VCEO
100V
Ic Max
4A
Pd Max
12.5W
hFE Gain
180
Quick Reference
The MJD253T4G is a PNP bipolar transistor in a TO-252-2(DPAK) package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 4A continuous collector current. Download the MJD253T4G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252-2(DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 4A | Collector current |
| Pd | 12.5W | Power dissipation |
| DC Current Gain | 180 | hFE / Beta |
| Frequency | 40MHz | Transition speed (fT) |
| VCEsat | 600mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD127T4 | PNP | TO-252-2(DPAK) | 100V | 8A | 20W |