MJD127T4 Transistor Datasheet & Specifications

PNP TO-252-2(DPAK) High Power ST
VCEO
100V
Ic Max
8A
Pd Max
20W
hFE Gain
1000
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Quick Reference

The MJD127T4 is a PNP bipolar transistor in a TO-252-2(DPAK) package by ST. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the MJD127T4 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-252-2(DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic8ACollector current
Pd20WPower dissipation
DC Current Gain1000hFE / Beta
Frequency-Transition speed (fT)
VCEsat4VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current10uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all TO-252-2(DPAK) PNP Transistors ›