MJB41CT4G Transistor Datasheet & Specifications
NPN
D2PAK
High Power
onsemi
VCEO
100V
Ic Max
6A
Pd Max
65W
hFE Gain
30
Quick Reference
The MJB41CT4G is a NPN bipolar transistor in a D2PAK package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 6A continuous collector current. Download the MJB41CT4G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | D2PAK | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 6A | Collector current |
| Pd | 65W | Power dissipation |
| DC Current Gain | 30 | hFE / Beta |
| Frequency | 3MHz | Transition speed (fT) |
| VCEsat | 1.5V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 700uA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJB41CG | NPN | D2PAK | 100V | 6A | 65W |
| STB13007DT4 | NPN | D2PAK | 700V | 16A | 80W |