STB13007DT4 Transistor Datasheet & Specifications
NPN
D2PAK
High Power
ST
VCEO
700V
Ic Max
16A
Pd Max
80W
hFE Gain
8
Quick Reference
The STB13007DT4 is a NPN bipolar transistor in a D2PAK package by ST. This datasheet provides complete specifications including 700V breakdown voltage and 16A continuous collector current. Download the STB13007DT4 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | D2PAK | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 700V | Breakdown voltage |
| Ic | 16A | Collector current |
| Pd | 80W | Power dissipation |
| DC Current Gain | 8 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 2V | Saturation voltage |
| Vebo | 9V | Emitter-Base voltage |
| Cutoff Current | 100uA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |