LBTN180Y3T1G Transistor Datasheet & Specifications

NPN SOT-89 General Purpose LRC
VCEO
80V
Ic Max
1A
Pd Max
550mW
hFE Gain
63

Quick Reference

The LBTN180Y3T1G is a NPN bipolar transistor in a SOT-89 package by LRC. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the LBTN180Y3T1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLRCOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1ACollector current
Pd550mWPower dissipation
DC Current Gain63hFE / Beta
Frequency180MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current10uALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
BCX56-16,115 NPN SOT-89 80V 1A 1.35W
BCX56-16 NPN SOT-89 80V 1A 1.3W
BCX56,115 NPN SOT-89 80V 1A 1.35W
ZXTN2011ZTA NPN SOT-89 100V 4.5A 2.1W
BCX56-10,115 NPN SOT-89 80V 1A 500mW
BCX56-16,115-CN NPN SOT-89 80V 1A 500mW
NTE2428-HXY NPN SOT-89 80V 1A 500mW
BCX56-16 NPN SOT-89 80V 1A 500mW
BCX56-16 NPN SOT-89 80V 1A 1.3W
H2SD1898T100R NPN SOT-89 80V 1A 500mW