LBC857BWT1G Transistor Datasheet & Specifications

PNP SC-70 General Purpose LRC
VCEO
45V
Ic Max
100mA
Pd Max
150mW
hFE Gain
220

Quick Reference

The LBC857BWT1G is a PNP bipolar transistor in a SC-70 package by LRC. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the LBC857BWT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLRCOriginal Manufacturer
PackageSC-70Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic100mACollector current
Pd150mWPower dissipation
DC Current Gain220hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current4uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2SA1586-GR,LF PNP SC-70 50V 150mA 200mW
LBC856BWT1G PNP SC-70 65V 100mA 150mW
PMST2907A,115 PNP SC-70 60V 600mA 200mW
L2SA1576AQT1G PNP SC-70 50V 150mA 150mW