LBC856BWT1G Transistor Datasheet & Specifications
PNP
SC-70
General Purpose
LRC
VCEO
65V
Ic Max
100mA
Pd Max
150mW
hFE Gain
220
Quick Reference
The LBC856BWT1G is a PNP bipolar transistor in a SC-70 package by LRC. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the LBC856BWT1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | LRC | Original Manufacturer |
| Package | SC-70 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 65V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 150mW | Power dissipation |
| DC Current Gain | 220 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 650mV | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 15nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |