LBC847CPDW1T1G Transistor Datasheet & Specifications
NPN+PNP
SOT-363(SC-88)
General Purpose
LRC
VCEO
45V
Ic Max
100mA
Pd Max
380mW
hFE Gain
200
Quick Reference
The LBC847CPDW1T1G is a NPN+PNP bipolar transistor in a SOT-363(SC-88) package by LRC. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the LBC847CPDW1T1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | LRC | Original Manufacturer |
| Package | SOT-363(SC-88) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 45V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 380mW | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 250mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 15nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| LBC847BPDW1T1G | NPN+PNP | SOT-363(SC-88) | 45V | 100mA | 380mW |
| LBC846BPDW1T1G | NPN+PNP | SOT-363(SC-88) | 65V | 100mA | 380mW |