LBC846BPDW1T1G Transistor Datasheet & Specifications

NPN+PNP SOT-363(SC-88) General Purpose LRC
VCEO
65V
Ic Max
100mA
Pd Max
380mW
hFE Gain
200
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Quick Reference

The LBC846BPDW1T1G is a NPN+PNP bipolar transistor in a SOT-363(SC-88) package by LRC. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the LBC846BPDW1T1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLRCOriginal Manufacturer
PackageSOT-363(SC-88)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO65VBreakdown voltage
Ic100mACollector current
Pd380mWPower dissipation
DC Current Gain200hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat250mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current15nALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all SOT-363(SC-88) NPN+PNP Transistors ›