KSB772YS-HXY Transistor Datasheet & Specifications
PNP
TO-126
General Purpose
HXY MOSFET
VCEO
30V
Ic Max
3A
Pd Max
1W
hFE Gain
300
Quick Reference
The KSB772YS-HXY is a PNP bipolar transistor in a TO-126 package by HXY MOSFET. This datasheet provides complete specifications including 30V breakdown voltage and 3A continuous collector current. Download the KSB772YS-HXY datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 30V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJE172 | PNP | TO-126 | 80V | 3A | 12.5W |
| KTB1151-Y-U/PH | PNP | TO-126 | 60V | 5A | 20W |
| BD680ASTU-HXY | PNP | TO-126 | 80V | 4A | 2W |