BD680ASTU-HXY Transistor Datasheet & Specifications

PNP TO-126 General Purpose HXY MOSFET
VCEO
80V
Ic Max
4A
Pd Max
2W
hFE Gain
-
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Quick Reference

The BD680ASTU-HXY is a PNP bipolar transistor in a TO-126 package by HXY MOSFET. This datasheet provides complete specifications including 80V breakdown voltage and 4A continuous collector current. Download the BD680ASTU-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic4ACollector current
Pd2WPower dissipation
DC Current Gain-hFE / Beta
Frequency-Transition speed (fT)
VCEsat1.8V@3A,12mASaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
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