HMMDT39467F Transistor Datasheet & Specifications
NPN+PNP
SOT-363
General Purpose
HXY MOSFET
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
100
Quick Reference
The HMMDT39467F is a NPN+PNP bipolar transistor in a SOT-363 package by HXY MOSFET. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the HMMDT39467F datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT3946 | NPN+PNP | SOT-363 | 40V | 200mA | 200mW |
| PMBT3946YPN-HXY | NPN+PNP | SOT-363 | 40V | 200mA | 200mW |
| MBT3946DW1T1G-HXY | NPN+PNP | SOT-363 | 40V | 200mA | 200mW |
| TPMMDT5551 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT3946 | NPN+PNP | SOT-363 | 40V | 200mA | 200mW |
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT3946 | NPN+PNP | SOT-363 | 40V | 200mA | 200mW |
| MMDT4413 | NPN+PNP | SOT-363 | 40V | 600mA | 200mW |
| MMDT3946DW | NPN+PNP | SOT-363 | 40V | 200mA | 200mW |