HFMMT591QTA Transistor Datasheet & Specifications

PNP SOT-23 General Purpose HXY MOSFET
VCEO
60V
Ic Max
1A
Pd Max
250mW
hFE Gain
100

Quick Reference

The HFMMT591QTA is a PNP bipolar transistor in a SOT-23 package by HXY MOSFET. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the HFMMT591QTA datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic1ACollector current
Pd250mWPower dissipation
DC Current Gain100hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
FMMT591TA PNP SOT-23 60V 1A 500mW
FMMT591 PNP SOT-23 60V 1A 500mW
DPBT8105-7 PNP SOT-23 60V 1A 600mW
DPLS160-7 PNP SOT-23 60V 1A 300mW
NSV60200LT1G PNP SOT-23 60V 2A 540mW
FMMT591 PNP SOT-23 60V 1A 250mW
FMMT591 PNP SOT-23 60V 1A 500mW
2PB710ARL-HXY PNP SOT-23 60V 1A 250mW