FMMT591 Transistor Datasheet & Specifications

PNP SOT-23 General Purpose HXY MOSFET
VCEO
60V
Ic Max
1A
Pd Max
250mW
hFE Gain
300

Quick Reference

The FMMT591 is a PNP bipolar transistor in a SOT-23 package by HXY MOSFET. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the FMMT591 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic1ACollector current
Pd250mWPower dissipation
DC Current Gain300hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat600mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
FMMT591TA PNP SOT-23 60V 1A 500mW
FMMT591 PNP SOT-23 60V 1A 500mW
DPBT8105-7 PNP SOT-23 60V 1A 600mW
DPLS160-7 PNP SOT-23 60V 1A 300mW
NSV60200LT1G PNP SOT-23 60V 2A 540mW
FMMT591 PNP SOT-23 60V 1A 250mW
FMMT591 PNP SOT-23 60V 1A 500mW
2PB710ARL-HXY PNP SOT-23 60V 1A 250mW