DXT2010P5-13 Transistor Datasheet & Specifications
NPN
PowerDI-5
High Power
DIODES
VCEO
60V
Ic Max
6A
Pd Max
3.2W
hFE Gain
55
Quick Reference
The DXT2010P5-13 is a NPN bipolar transistor in a PowerDI-5 package by DIODES. This datasheet provides complete specifications including 60V breakdown voltage and 6A continuous collector current. Download the DXT2010P5-13 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | PowerDI-5 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 6A | Collector current |
| Pd | 3.2W | Power dissipation |
| DC Current Gain | 55 | hFE / Beta |
| Frequency | 130MHz | Transition speed (fT) |
| VCEsat | 210mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 20nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| DXT2011P5-13 | NPN | PowerDI-5 | 100V | 6A | 3.2W |