DXT2011P5-13 Transistor Datasheet & Specifications

NPN PowerDI-5 High Power DIODES
VCEO
100V
Ic Max
6A
Pd Max
3.2W
hFE Gain
30
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Quick Reference

The DXT2011P5-13 is a NPN bipolar transistor in a PowerDI-5 package by DIODES. This datasheet provides complete specifications including 100V breakdown voltage and 6A continuous collector current. Download the DXT2011P5-13 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackagePowerDI-5Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic6ACollector current
Pd3.2WPower dissipation
DC Current Gain30hFE / Beta
Frequency130MHzTransition speed (fT)
VCEsat125mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current500nALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
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