DSS5160T-7-HXY Transistor Datasheet & Specifications

PNP SOT-23 General Purpose HXY MOSFET
VCEO
60V
Ic Max
1A
Pd Max
250mW
hFE Gain
300

Quick Reference

The DSS5160T-7-HXY is a PNP bipolar transistor in a SOT-23 package by HXY MOSFET. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the DSS5160T-7-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic1ACollector current
Pd250mWPower dissipation
DC Current Gain300hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat600mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
FMMT591TA PNP SOT-23 60V 1A 500mW
FMMT591 PNP SOT-23 60V 1A 500mW
DPBT8105-7 PNP SOT-23 60V 1A 600mW
DPLS160-7 PNP SOT-23 60V 1A 300mW
NSV60200LT1G PNP SOT-23 60V 2A 540mW
FMMT591 PNP SOT-23 60V 1A 250mW
FMMT591 PNP SOT-23 60V 1A 500mW
2PB710ARL-HXY PNP SOT-23 60V 1A 250mW