D45H11G Transistor Datasheet & Specifications
PNP
TO-220
High Power
onsemi
VCEO
80V
Ic Max
10A
Pd Max
70W
hFE Gain
40
Quick Reference
The D45H11G is a PNP bipolar transistor in a TO-220 package by onsemi. This datasheet provides complete specifications including 80V breakdown voltage and 10A continuous collector current. Download the D45H11G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 10A | Collector current |
| Pd | 70W | Power dissipation |
| DC Current Gain | 40 | hFE / Beta |
| Frequency | 40MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |