D45VH10G Transistor Datasheet & Specifications
PNP
TO-220
High Power
onsemi
VCEO
100V
Ic Max
15A
Pd Max
83W
hFE Gain
35
Quick Reference
The D45VH10G is a PNP bipolar transistor in a TO-220 package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 15A continuous collector current. Download the D45VH10G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 15A | Collector current |
| Pd | 83W | Power dissipation |
| DC Current Gain | 35 | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |