CXT3019TR-HXY Transistor Datasheet & Specifications

NPN SOT-89 General Purpose HXY MOSFET
VCEO
80V
Ic Max
1A
Pd Max
500mW
hFE Gain
390

Quick Reference

The CXT3019TR-HXY is a NPN bipolar transistor in a SOT-89 package by HXY MOSFET. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the CXT3019TR-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1ACollector current
Pd500mWPower dissipation
DC Current Gain390hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
BCX56-16,115 NPN SOT-89 80V 1A 1.35W
BCX56-16 NPN SOT-89 80V 1A 1.3W
BCX56,115 NPN SOT-89 80V 1A 1.35W
ZXTN2011ZTA NPN SOT-89 100V 4.5A 2.1W
BCX56-10,115 NPN SOT-89 80V 1A 500mW
BCX56-16,115-CN NPN SOT-89 80V 1A 500mW
NTE2428-HXY NPN SOT-89 80V 1A 500mW
BCX56-16 NPN SOT-89 80V 1A 500mW
BCX56-16 NPN SOT-89 80V 1A 1.3W
H2SD1898T100R NPN SOT-89 80V 1A 500mW