BF820-QR Transistor Datasheet & Specifications
NPN
SOT-89
General Purpose
Nexperia
VCEO
300V
Ic Max
50mA
Pd Max
250mW
hFE Gain
50
Quick Reference
The BF820-QR is a NPN bipolar transistor in a SOT-89 package by Nexperia. This datasheet provides complete specifications including 300V breakdown voltage and 50mA continuous collector current. Download the BF820-QR datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 300V | Breakdown voltage |
| Ic | 50mA | Collector current |
| Pd | 250mW | Power dissipation |
| DC Current Gain | 50 | hFE / Beta |
| Frequency | 60MHz | Transition speed (fT) |
| VCEsat | 600mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | - | Operating temp |