FCX658ATA Transistor Datasheet & Specifications
NPN
SOT-89
General Purpose
DIODES
VCEO
400V
Ic Max
500mA
Pd Max
1W
hFE Gain
85
Quick Reference
The FCX658ATA is a NPN bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 400V breakdown voltage and 500mA continuous collector current. Download the FCX658ATA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 400V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 85 | hFE / Beta |
| Frequency | 90MHz | Transition speed (fT) |
| VCEsat | 165mV | Saturation voltage |
| Vebo | 7.8V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| PBHV8540X,115 | NPN | SOT-89 | 400V | 500mA | 520mW |