BD537 Transistor Datasheet & Specifications
NPN
TO-220C
High Power
SPTECH
VCEO
80V
Ic Max
8A
Pd Max
50W
hFE Gain
40
Quick Reference
The BD537 is a NPN bipolar transistor in a TO-220C package by SPTECH. This datasheet provides complete specifications including 80V breakdown voltage and 8A continuous collector current. Download the BD537 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-220C | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 50W | Power dissipation |
| DC Current Gain | 40 | hFE / Beta |
| Frequency | 3MHz | Transition speed (fT) |
| VCEsat | 800mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100uA | Leakage (ICBO) |
| Temp | - | Operating temp |