BD801 Transistor Datasheet & Specifications
NPN
TO-220C
High Power
SPTECH
VCEO
100V
Ic Max
8A
Pd Max
65W
hFE Gain
30
Quick Reference
The BD801 is a NPN bipolar transistor in a TO-220C package by SPTECH. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the BD801 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-220C | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 65W | Power dissipation |
| DC Current Gain | 30 | hFE / Beta |
| Frequency | 3MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100uA | Leakage (ICBO) |
| Temp | - | Operating temp |