BD180G Transistor Datasheet & Specifications

PNP TO-225-3 High Power onsemi
VCEO
80V
Ic Max
1A
Pd Max
30W
hFE Gain
250
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Quick Reference

The BD180G is a PNP bipolar transistor in a TO-225-3 package by onsemi. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the BD180G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-225-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1ACollector current
Pd30WPower dissipation
DC Current Gain250hFE / Beta
Frequency3MHzTransition speed (fT)
VCEsat800mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current1mALeakage (ICBO)
Temp-65℃~+150℃Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJE253G PNP TO-225-3 100V 4A 15W
MJE172G PNP TO-225-3 80V 3A 12.5W
View all TO-225-3 PNP Transistors ›