BCV46,215 Transistor Datasheet & Specifications
PNP
TO-236AB
General Purpose
Nexperia
VCEO
60V
Ic Max
500mA
Pd Max
250mW
hFE Gain
10000
Quick Reference
The BCV46,215 is a PNP bipolar transistor in a TO-236AB package by Nexperia. This datasheet provides complete specifications including 60V breakdown voltage and 500mA continuous collector current. Download the BCV46,215 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | TO-236AB | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 250mW | Power dissipation |
| DC Current Gain | 10000 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| PBSS5160T-QR | PNP | TO-236AB | 60V | 1A | 400mW |