PBSS5160T-QR Transistor Datasheet & Specifications

PNP TO-236AB General Purpose Nexperia
VCEO
60V
Ic Max
1A
Pd Max
400mW
hFE Gain
350
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Quick Reference

The PBSS5160T-QR is a PNP bipolar transistor in a TO-236AB package by Nexperia. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the PBSS5160T-QR datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageTO-236ABPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic1ACollector current
Pd400mWPower dissipation
DC Current Gain350hFE / Beta
Frequency220MHzTransition speed (fT)
VCEsat330mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current50uALeakage (ICBO)
Temp-65℃~+150℃Operating temp

Equivalent Transistors & Alternatives

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